The rapid growth of photovoltaic and energy‑storage markets raises higher requirements for power handling, efficiency and durability of semiconductor components.Our power components — including silicon & silicon‑carbide MOSFETs, high‑current Schottky diodes and fast‑recovery rectifiers — are engineered to withstand harsh operating conditions with low conduction and switching losses.These devices support mainstream solar solutions: string inverters, micro‑inverters, power optimizers, as well as bidirectional converters for solar‑plus‑storage systems. By optimizing thermal performance and dynamic characteristics, they enable photovoltaic systems to harvest more energy and operate stably over a long service life.
Schottky diodes are used in photovoltaic junction boxes
Photovoltaic Schottky Diodes Chip size: 100–180 mil Voltage: 40–60 V Current: 20–50 APackage type: R-6 / TO-263 / Module
Photovoltaic Inverter
IGBT: 600V/1200V, 25A–600A, discrete/module FRD: 600V/1200V, 25A–600A, discrete/module SiC MOSFET/SiC FRD: 600V/1200V, discrete
Photovoltaic Controller
Applicable Device Info: Low-voltage MOSFETs: below 100V, 20–100A